MALVERN, PENNSYLVANIA— Nov. 4, 2010— Vishay Intertechnology, Inc. (NYSE: VSH) today released a new 600 V, 47 A n-channel power MOSFET with ultra-low maximum on-resistance of 0.07Ω at a 10 V gate drive and an improved gate charge of 216 nC in the TO-247 package. TheSiHG47N60S’s 15.12Ω-nC gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is the industry’s lowest for this device type.
The low on-resistance of theSiHG47N60Stranslates into lower conduction losses that save energy in inverter circuits and pulsewidth modulation (PWM) full-bridge topologies in solar and wind inverters, and telecom, server, and motor control power applications.
The newSiHG47N60Sis produced using Vishay Super Junction technology, which has been tailored to minimize on-state resistance and withstand high energy pulse in the avalanche and commutation mode. The MOSFET is compliant to RoHS Directive 2002/95/EC and 100% avalanche tested for reliable operation.
Samples and production quantities of the new power MOSFET are available now, with lead times of 10 to 12 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and"one-stop shop"service have made it a global industry leader. Vishay can be found on the Internet at http://www.vishay.com.
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