MALVERN, PENNSYLVANIA— Feb. 24, 2011— Vishay Intertechnology, Inc. (NYSE: VSH) today released two new 100 V n-channel TrenchFET® power MOSFETs with on-resistance ratings down to 4.5 V VGSin SO-8 and PowerPAK® SO-8 packages. Utilizing Vishay’s new ThunderFET® technology, theSiR870DPandSi4190DYoffer the lowest values of on-resistance in the industry for 100 V MOSFETs with 4.5 V ratings. In addition the product of on-resistance and gate charge— a key figure of merit (FOM) for MOSFETs in DC/DC converter applications— is also best in class.
TheSiR870DP’s low on-resistance of 7.8 mΩ at 4.5 V is the industry’s lowest. This MOSFET also offers a very low on-resistance of 6 mΩ at 10 V. For designers, the device’s lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions.
With its industry-low 208 mΩ-nC FOM at 4.5 V, theSiR870DPcombines low conduction and switching losses for higher frequency and switching applications. For designers requiring an SO-8 packaged device, theSi4190DY’s on-resistance of 8.8 mΩ at 10 V and 12 mΩ at 4.5 V, in addition to its FOM of 340 mΩ-nC at 10 V and 220 mΩ-nC at 4.5 V, are the industry’s best.
The devices released today are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs’ 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered. By utilizing 5 V rated ICs, gate driver losses can be reduced and the overall design simplified by eliminating the need for a separate 12 V power rail.
TheSiR870DPandSi4190DYare 100 % Rg and UIS tested. The MOSFETs are halogen-free according to the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC.
Device Specification Table:
| Part number | SiR870DP | Si4190DY |
|---|---|---|
| Package | PowerPAK SO-8 | SO-8 |
| VDS(V) | 100 | 100 |
| VGS(V) | ± 20 | ± 20 |
| RDS(ON)@ 10 V (mΩ) | 6 | 8.8 |
| RDS(ON)@ 7.5 V (mΩ) | 6.4 | - |
| RDS(ON)@ 4.5 V (mΩ) | 7.8 | 12 |
| FOM @ 10 V (mΩ-nC) | 334 | 340 |
| FOM @ 7.5 V (mΩ-nC) | 272 | - |
| FOM @ 4.5 V (mΩ-nC) | 208 | 220 |
Samples and production quantities of the new MOSFETs are available now, with lead times of 16 weeks for large orders.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and"one-stop shop"service have made it a global industry leader. Vishay can be found on the Internet at http://www.vishay.com.
TrenchFET, ThunderFET, and PowerPAK are registered trademarks of Siliconix incorporated.
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